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SCALE - iDriver IC

SCALE - iDriver series gate drive IC can provide drive for IGBT, MOSFET and SiC MOSEFT, is also the first will Power Integrations pioneering FluxLink magnetic induction two-way communication technology is introduced into 1200 V and 1700 V drives the application of products.

  • FluxLink technologyCan save life is relatively short of photoelectric devices and related compensation circuit, so as to enhance the reliability of system operation, and reduce the complexity of the system
  • Advanced system securityAnd protection function(often used in medium voltage and high voltage applications) can enhance product reliability
  • Innovation of the eSOP encapsulationWith a 9.5 mm creepage distance and relative tracking index (CTI) is 600, can guarantee the working voltage of a larger allowance and higher reliability of the system
  • Silicon carbide (SiC) MOSFETGate driver IC can provide maximum peak output gate current level without external drive, after setting can support different gate drive voltage, to meet the needs of commercial SiC MOSFET
  • AEC - Q100 certification automotive applicationsSCALE - iDriver IC can provide under 125 ° C temperature 8 a drive, and can be used in not pushing support under the condition of output power level within hundreds of kilowatts of 600 v, 650 v, 750 v and 1200 v IGBT and SiC inverter design

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SCALE - iDriver SIC1182K InSOP - 24 d in Package
SIC1182K
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8 a biggest single channel SiC MOSFET gate drive, can provide advanced active clamping and 1200 v reinforced insulation

The Data SheetLook at the PDF The Description

8 a biggest single channel SiC MOSFET gate drive, can provide advanced active clamping and 1200 v reinforced insulation

Max Breakdown Voltage600 V, 1200 V The Power SwitchSiC MOSFET
SCALE - iDriver SIC118xKQ InSOP - 24 d in Package
SIC118xKQ
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Auto level single channel SiC MOSFET and IGBT gate driver, can provide advanced active clamp and reinforced insulation

The Data SheetLook at the PDF The Description

Auto level single channel SiC MOSFET and IGBT gate driver, can provide advanced active clamp and reinforced insulation

Max Breakdown Voltage750 V, 1200 V The Power SwitchSiC MOSFET
SCALE - iDriver SID1102K InSOP - 24 d in Package
SID1102K
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Maximum 5 a single channel of IGBT/MOSFET gate drive, can withstand voltage 1200 v IGBT and MOSFET provide reinforced insulation

The Data SheetLook at the PDF The Description

Maximum 5 a single channel of IGBT/MOSFET gate drive, can withstand voltage 1200 v IGBT and MOSFET provide reinforced insulation

Max Breakdown Voltage600 V, 1200 V The Power SwitchIGBT, MOSFET
SCALE - iDriver SID11x1K InSOP - 24 d in Package
SID11x1K
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Single channel/MOSFET IGBT gate driver, can provide reinforced insulation withstand voltage 650 V

The Data SheetLook at the PDF The Description

Single channel/MOSFET IGBT gate driver, can provide reinforced insulation withstand voltage 650 V

Max Breakdown Voltage650 V, 1200 V The Power SwitchIGBT, MOSFET
SCALE - iDriver SID11x2K InSOP - 24 d in Package
SID11x2K
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With advanced security and protection of electrical insulation of single access door drive IC

The Data SheetLook at the PDF The Description

With advanced security and protection of electrical insulation of single access door drive IC

Max Breakdown Voltage600 V, 1200 V The Power SwitchIGBT, MOSFET
SCALE - iDriver SID11xxKQ InSOP - 24 d in Package
SID11xxKQ
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Car dedicated can provide reinforced insulation single channel/MOSFET IGBT gate driver

The Data SheetLook at the PDF The Description

Car dedicated can provide reinforced insulation single channel/MOSFET IGBT gate driver

Max Breakdown Voltage600 V, 1200 V The Power SwitchIGBT, MOSFET