SiC MOSFET power switch

Using the full range SCALE gate drive control SiC MOSFET power switch products

Silicon carbide (SiC) MOSFET can significantly improve the switch performance of high-power inverter application, to enhance the thermal performance at the same time provide high breakdown voltage and drift velocity.SiC requirements in a more compact design, however, to get more quick short-circuit protection, the opposite pole drives presents unique challenges - in different SiC architecture supports a variety of gate voltage.

SCALE - iDriver SiC - MOSFET gate driver IC

PI new SIC1182K SCALE - iDriver IC is a commercially available can provide efficient single channel SiC MOSFET gate drive, can provide maximum peak output gate current without external drive level.After setting it can support different gate drive voltage, to meet the needs of commercial SiC MOSFET.

SCALE - 2, 2 + gate drive nuclear SCALE - and SCALE - iDriver gate driver IC

In addition to drive IGBT and the conventional silicon power devices such as MOSFET, SCALE and SCALE - 2 + gate drive nuclear and SCALE - iDriver gate drive IC can also drive SiC MOSFET power switch.

Gate drive products can be ordered

• SIC1182K- SiC MOSEFT gate drive
• SCALE - iDriver- the gate driver IC
• 2 sc0115t - 12The nuclear SCALE - 2 + driver
• 2 sc0435t - 17The nuclear SCALE - 2 + driver
• 1 sc2060p - 17- driven by flat transformer SCALE - 2 nucleus
• 2 sc0650p - 17- driven by flat transformer SCALE - 2 nucleus
• 2 sc0535t - 17The nuclear SCALE - 2 drivers
• 2 sc0635t - 45The nuclear SCALE - 2 drivers

SiC polar opposite drive presents unique challenges

From different suppliers and generation of SiC MOSFET switches to open and shut off level have different requirements.For example, some devices can work at 15 V / 10 V level, the level and other devices for the 19 V / 6 V.Also, some devices require a stable voltage, while others require stable load off voltage, to ensure that they can't more than the door - source security workspace.

According to the requirements of different adjustment SCALE gate drive, can veto associated with open and shut off the level of the positive and negative voltage partition of voltage control (VEE stabilizer).Please refer to theApplication guide the AN - 1601For more detailed information.

Figure 2. The SCALE - iDriver support different SiC MOSFET (by adjusting the drive to meet V_GSRequirements)

Figure 3. Different SCALE gate drive pin layout, VEx/VEE pins have tags

Why use SCALE gate driver to drive the Sic MOSFET

Can adjust the gate voltage by external VEE circuit Short circuit protection (including 2 s or less response time Large output current capability Strong insulating ability With dv/dt feedback dynamic senior active clamp Switching frequency can be as high as 500 KHZ Can be used for the breakdown voltage of 4.5 kV SiC MOSFET MTBF high/low rate of FIT Support the MOSFET module in parallel Suitable for all SiC MOSFET design

SIC1182K perfect protective properties

SiC senior active clamp Super quick short circuit test Over current fault shut off The original party and vice party under-voltage protection (UVLO)